报告题目 | Development of SWIR single photon avalanche diode |
报告人 | 易鑫 研究员 |
报告人单位 | 英国赫瑞瓦特大学 |
报告时间 | 2024-04-12 (周五) 10:00 |
报告地点 | 上海研究院4号楼329报告厅(合肥物质楼B1102同步视频) |
主办单位 | 中国科学院量子信息与量子科技创新研究院 |
报告介绍 | 报告摘要:Avalanche photodiodes (APDs), operated in Geiger mode (sometimes called single-photon avalanche diodes, SPADs), have developed over the last 35 years and been widely utilized in quantum technology applications. For example, Canon has developed a 3.2-megapixel Silicon SPADs array sensor. However, the silicon bandgap, 1.12 eV at room temperature, stops working in the SWIR region. There is a growing demand for SPADs operating beyond the spectral range of silicon, especially in the SWIR range due to the availability of low-loss telecommunication fibres and eye-safe free space transmission. Here, I will present our innovation in III-V avalanche materials which can be utilized in the new generation of InP-based SPADs operating at 1550 nm. We have found that the Sb-containing avalanche materials have lower excess noise factors, higher trigger probability and weaker temperature dependence, compared to current material such as InP and InAlAs. Then I will discuss our recent results on the development of surface-nominal illuminated SWIR Ge-on-Si SPADs. |